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The Semiconductor Roadmap The SIA (Semiconductor Industry Association) roadmap projects a continuing miniaturization of silicon semiconductor devices for the next 15 years. International Technology Roadmap for Semiconductors (ITRS): public.itrs.net www.iso.gmu.edu J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 2 Moore's Law Gordon Moore, co-founder of Intel, 1965 www.physics.udel.edu dot.che.gatech.edu Hg arc lamp =436, 365, 248 nm, KrF laser =248 nm, ArF laser =193 nm, F laser =157 nm 0 0 0 2 0 J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 3 Future Lithography Systems Prcatically all materials absorb strongly between =157 and 14 nm Extreme UV laser based plasma sources =10-14 nm, mirrors, reflection masks X-ray X-ray tube, synchrotron ~1 nm, Fresnel lenses Ion projection, (Focused Ion Beam) Synchrotron radiation based lithography Lawrence Berkeley National Laboratory (2002) oemagazine.com EUV lithography unit J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 4 Electronic Elements: Challenges www.unine.ch • scaling rules • gate dielectric silicon-dioxide ~ 1.5 nm => high-k materials as Al O , TiO ,... 2 3 2 • dopant fluctuations, noise • thermodynamics • quantum effects: discretization and tunneling • logic circuit architecture www-hpc.jpl.nasa.gov J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 5 Possible Future Directions Advanced MOSFET concepts 3D architecture Superconducting electronics Single electron devices from [3] Spintronics Quantum computing: qubits DNA computing J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 6
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